Metal rail conductors for non-planar semiconductor devices

ABSTRACT

The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices. This isolation prevents electrical connection between the one or more metal rail conductors and the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. Non-provisional patentapplication Ser. No. 16/176,074, filed on Oct. 31, 2018, which claimsthe benefit of U.S. Provisional Patent Appl. No. 62/592,744, filed Nov.30, 2017 and Provisional Patent Appl. No. 62/592,922, filed Nov. 30,2017, all of which are incorporated herein by reference in theirentireties.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs, where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (e.g., the number of interconnecteddevices per chip area) has generally increased while geometry size(e.g., the smallest component or line that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates an isometric view of an exemplary non-planarsemiconductor device according to an exemplary embodiment of the presentdisclosure;

FIG. 1B illustrates an isometric view of a dielectric region within theexemplary non-planar semiconductor device according to an exemplaryembodiment of the present disclosure;

FIG. 1C illustrates an isometric view of a dielectric region within theexemplary non-planar semiconductor device according to an exemplaryembodiment of the present disclosure;

FIG. 1D and FIG. 1E illustrate isometric views of a first exemplaryintegrated circuit and a second exemplary integrated circuit,respectively, each having non-planar semiconductor devices according toan exemplary embodiment of the present disclosure;

FIG. 2 illustrates a block diagram of an electronic design platformaccording to an exemplary embodiment of the present disclosure;

FIG. 3A through FIG. 12B illustrate various views ofpartially-fabricated semiconductor structures where metal conductor railstructures formed in interlayer dielectric materials can be used toprovide electrical connection between multiple gate/source/drainterminals of finFET arrays according to exemplary embodiments of thepresent disclosure;

FIGS. 13-15C are isometric views of partially-fabricated semiconductorstructures where metal conductor rail structures formed in interlayerdielectric materials can be used to provide electrical connectionbetween multiple gate structures of finFET arrays; and

FIG. 16 is a flow diagram of an example method of forming metal railconductors in an ILD layer according to an exemplary embodiment of thepresent disclosure.

FIGS. 17-20 are cell layout diagrams of semiconductor structures, wheremetal conductor rail structures can be used to provide electricalconnection between multiple gate/source/drain terminals of finFET arraysaccording to exemplary embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is does not in itselfdictate a relationship between the various embodiments and/orconfigurations described.

Overview

The present disclosure describes various non-planar semiconductordevices, such as fin field-effect transistors (finFETs) to provide anexample, having one or more metal rail conductors and various methodsfor fabricating these non-planar semiconductor devices. In somesituations, the one or more metal rail conductors can be electricallyconnected to gate, source, and/or drain regions of these variousnon-planar semiconductor devices. In these situations, the one or moremetal rail conductors can be utilized to electrically connect the gate,the source, and/or the drain regions of various non-planar semiconductordevices to other gate, source, and/or drain regions of variousnon-planar semiconductor devices and/or other semiconductor devices.However, in other situations, the one or more metal rail conductors canbe isolated from the gate, the source, and/or the drain regions thesevarious non-planar semiconductor devices. This isolation preventselectrical connection between the one or more metal rail conductors andthe gate, the source, and/or the drain regions these various non-planarsemiconductor devices.

Exemplary Non-Planar Semiconductor Devices

FIG. 1A illustrates an isometric view of an exemplary non-planarsemiconductor device according to an exemplary embodiment of the presentdisclosure. In the exemplary embodiment illustrated in FIG. 1A, a finfield-effect transistor (finFET) 100 represents a non-planarsemiconductor device situated onto a dielectric region having one ormore metal rail conductors. In some situations, the one or more metalrail conductors can be electrically connected to conductive structuressuch as, for example, gate, source, and/or drain regions of the finFET100. In these situations, the one or more metal rail conductors can beutilized to electrically connect the gate, the source, and/or the drainregions of the finFET 100 to other gate, source, and/or drain regions ofthe finFET 100 and/or other semiconductor devices. However, in othersituations, the dielectric region can isolate the one or more metal railconductors from the gate, the source, and/or the drain regions of thefinFET 100. This isolation prevents electrical connection between theone or more metal rail conductors and the gate, source, and/or drainregions of the finFET 100. In some embodiments, metal rail conductorscan be formed using other suitable conductive material such as, forexample, doped semiconductor material. As illustrated in FIG. 1A, thefinFET 100 includes a semiconductor substrate 102, a fin structure 104,a source region 106, a gate region 108, a drain region 110, a dielectricregion 112, and one or more metal rail conductors 114. However, thefinFET 100 can include other regions, such as other dielectric regionsand/or short trench isolation (STI) regions to provide some examples,without departing from the spirit and scope of the present disclosure.Although the description to follows describes the one or more metal railconductors 114 in terms of a finFET, the one or more metal railconductors 114 can be used in other non-planar semiconductor devices aswell as planar semiconductor devices without departing from the spiritand scope of the present disclosure.

As illustrated in FIG. 1A, the fin structure 104, the source region 106,the gate region 108, the drain region 110, the dielectric region 112,and the one or more metal rail conductors 114 are situated on thesemiconductor substrate 102. In the exemplary embodiment illustrated inFIG. 1A, the semiconductor substrate 102 can include one or moresemiconductor materials, such as germanium (Ge), silicon carbide (SiC),gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide(InP), indium arsenide (InAs), gallium arsenide phosphide (GaAsP),aluminum indium arsenide (AlInAs), aluminum gallium arsenide (AlGaAs),gallium indium arsenide (GaInAs), gallium indium phosphide (GaInP),gallium indium arsenide phosphide (GaInAsP), indium antimonide (InSb),silicon germanium (SiGe), and/or any other suitable semiconductormaterial.

In the exemplary embodiment illustrated in FIG. 1A, the fin structure104, the source region 106, the gate region 108, and the drain region110 are arranged to form a fin field-effect transistor (finFET). Theconfiguration of the fin structure 104, the source region 106, the gateregion 108, and the drain region 110 as illustrated FIG. 1A are forillustrative purposes only. In some embodiments, other configurationsfor the fin structure 104, the source region 106, the gate region 108,and the drain region 110 can be included. As illustrated in FIG. 1A, thefin structure 104 passes through the gate region 108 in a horizontaldirection, namely along the x-axis of the Cartesian coordinate system,between the source region 106 and the drain region 110. The finstructure 104 can include the one or more semiconductor materials asdescribed above. In an exemplary embodiment, the fin structure 104includes substantially similar semiconductor materials as thesemiconductor substrate 102. Herein, a width of the fin structure 104,namely along a y-axis of a Cartesian coordinate system, is referred toas a fin width and a minimum pitch between adjacent fins allowed bylithography at a particular technology node, namely along a y-axis ofthe Cartesian coordinate system, is referred to as a fin pitch. Althoughthe finFET 100 is illustrated as including the fin structure 104 in FIG.1A, the finFET 100 can include more than one fin structure 104, inaccordance with some embodiments.

In an exemplary embodiment, the source region 106 and/or the drainregion 110 can include one or more epitaxial materials, such asepitaxial silicon (Si), epitaxial silicon germanium (SiGe), galliumarsenide (GaAs), and/or any other suitable epitaxial material.Alternatively, or in addition to, in another exemplary embodiment, thegate region 108 can include one or more p-type work function metalsand/or one or more n-type work function metals. The p-type work functionmetals can include titanium nitride (TiN), tantalum nitride (TaN),ruthenium (Ru), molybdenum (Mo), aluminum (Al), tungsten nitride (WN),zirconium disilicide (ZrSi₂), molybdenum disilicide (MoSi₂), tantalumdisilicide (TaSi₂), nickel disilicide (NiSi₂), platinum (Pt), and/or anyother suitable p-type work function metal, in accordance with someembodiments. The n-type work function metals can include aluminum (Al),titanium (Ti), silver (Ag), tantalum aluminum (TaAl), tantalum aluminumcarbon (TaAlC), tantalum aluminum nitride (TiAlN), tantalum carbide(TaC), tantalum carbide nitride (TaCN), tantalum silicide nitride(TaSiN), manganese (Mn), zirconium (Zr), and/or any other suitablen-type work function metal, in accordance with some embodiments.Alternatively, or in addition to, in a further exemplary embodiment, thegate region 108 can include one or more polycrystalline materials, suchas polycrystalline silicon to provide an example. As additionallyillustrated in FIG. 1A, the source region 106, the gate region 108, andthe drain region 110 are situated on the dielectric region 112 with thefin structure 104 traversing through the dielectric region 112 onto thesemiconductor substrate 102. The dielectric region 112, also referred toas an interlayer dielectric (ILD) region, can include one or moredielectric materials such as silicon oxide, spin-on-glass, siliconnitride, silicon carbide, silicon carbon nitride, silicon oxynitride,silicon oxycarbide, fluorine-doped silicate glass (FSG), a low-kdielectric material, and/or any other suitable dielectric material, inaccordance with some embodiments. Although not illustrated in FIG. 1A,other dielectric regions can be situated between the semiconductorsubstrate 102 and the dielectric region 112, in accordance with someembodiments.

Moreover, the one or more metal rail conductors 114 are situated withinthe dielectric region 112 as illustrated in FIG. 1A. The one or moremetal rail conductors 114 can include as tungsten (W), cobalt (Co),copper (Cu), aluminum (Al), and/or any other suitable conductive, orsemi-conductive, material, in accordance with some embodiments. Forexample, one or more metal rail conductors 114 can be formed usinghighly-doped silicon material. In the exemplary embodiment illustratedin FIG. 1A, the one or more metal rail conductors 114 includes two metalrail conductors situated within the dielectric region 112. However, thenumber of rail conductors of the one or more metal rail conductors 114can differ depending upon application, in accordance with someembodiments.

As illustrated in FIG. 1A, the one or more metal rail conductors 114traverse a length of the semiconductor substrate 102 in the horizontaldirection, namely along the x-axis of the Cartesian coordinate system,between the source region 106 and the drain region 110. In the exemplaryembodiment illustrated in FIG. 1A, the one or more metal rail conductors114 are situated to be parallel (e.g., extending in the same direction)to the fin structure 104. However, the one or more metal rail conductors114 can be situated to be perpendicular to the fin structure 104, inaccordance with some embodiments. In these situations, the one or moremetal rail conductors 114 traverse through the fin structure 104.

As to be described in further detail below in FIG. 1B, the dielectricregion 112 can be configured to isolate the source region 106, the gateregion 108, and/or and the drain region 110 and the one or more metalrail conductors 114 to prevent electrical connection between the sourceregion 106, the gate region 108, and/or and the drain region 110 and theone or more metal rail conductors 114. And as to be described in furtherdetail below in FIG. 1C, the source region 106, the gate region 108,and/or and the drain region 110 can be electrically connected to the oneor more metal rail conductors 114 to provide electrical connectionbetween the source region 106, the gate region 108, and/or and the drainregion 110 and the one or more metal rail conductors 114. In anexemplary embodiment, widths, namely along the y-axis of the Cartesiancoordinate system, of the one or more metal rail conductors 114 arebetween approximately 0.8 and approximately 2.2 times the fin width. Inthis exemplary embodiment, a separation between adjacent metal railconductors from among the one or more metal rail conductors 114 isbetween approximately 0.8 and approximately 1.2 times the fin pitch.Also, in this exemplary embodiment, heights, namely along the z-axis ofthe Cartesian coordinate system, of the one or more metal railconductors 114 is between approximately 0.8 and approximately 1.2 timesa gate pitch, namely a minimum pitch between adjacent gate regionsallowed by lithography at the particular technology node, namely alongthe x-axis and/or the y-axis of the Cartesian coordinate system.

In the exemplary embodiment illustrated in FIG. 1A, the one or moremetal rail conductors 114 have a substantially similar length, namelyalong the x-axis of the Cartesian coordinate system. However, lengths ofthe one or more metal rail conductors 114 can differ, in accordance withsome embodiments. In an exemplary embodiment, the one or more metal railconductors 114 have a substantially similar length, namely along thex-axis of the Cartesian coordinate system, as the semiconductorsubstrate 102. In this exemplary embodiment, the one or more metal railconductors 114 can be electrically and/or mechanically connected toother metal rail conductors of one or more other finFETs to form aninterconnected network of metal rail conductors. This interconnectednetwork of metal rail conductors can be used to electrically connectvarious conductive structures such as, for example, gate, source, and/ordrain regions of these finFETs to form one or more integrated circuits.These integrated circuits can include basic logical gates, such aslogical AND gates, logical OR gates, logical XOR gates, logical XNORgates, or logical NOT gates to provide some examples, as well as othermore complicated logical circuitry. This interconnected network of metalrail conductors allows these electrically connections between thevarious gate, source, and/or drain regions of these finFETs to be madewithout traversing through conventional metal layers which areconventionally available for routing signals. As such, theinterconnected network of metal rail conductors lessens the area interms of real estate necessary to form the one or more integratedcircuits when compared to using the conventional metal layers to formthese electrically connections between the various source regions and/ordrain regions of these finFETs.

FIG. 1B illustrates an isometric view of a first configuration of adielectric region within the exemplary non-planar semiconductor deviceaccording to an exemplary embodiment of the present disclosure. Asdescribed in FIG. 1A, the finFET 100 includes the fin structure 104, thesource region 106, the gate region 108, the drain region 110, thedielectric region 112, and the one or more metal rail conductors 114situated on the semiconductor substrate 102. A metal rail conductor 120and a dielectric region 122 as illustrated in FIG. 1B can representexemplary embodiments of the one of the one or more metal railconductors 114 and dielectric region 112 and respectively, as describedabove in FIG. 1A. Similarly, a terminal region 124 as illustrated inFIG. 1B can represent an exemplary embodiment of the source region 106,the gate region 108, and/or and the drain region 110 as described abovein FIG. 1A.

Referring to FIG. 1B, the dielectric region 122 is configured to preventelectrical connection between the metal rail conductor 120 and theterminal region 124. In the exemplary embodiment illustrated in FIG. 1B,the dielectric region 122 effectively isolates the metal rail conductor120 from the terminal region 124 to prevent the electrical connection.

FIG. 1C illustrates an isometric view of a second configuration of adielectric region within the exemplary non-planar semiconductor deviceaccording to an exemplary embodiment of the present disclosure. Asdescribed in FIG. 1A, the finFET 100 includes the fin structure 104, thesource region 106, the gate region 108, the drain region 110, thedielectric region 112, and the one or more metal rail conductors 114situated on the semiconductor substrate 102. The metal rail conductor120 and a dielectric region 126 as illustrated in FIG. 1C can representexemplary embodiments of the one of the one or more metal railconductors 114 and dielectric region 112 and respectively, as describedabove in FIG. 1A. Similarly, a terminal region 128 as illustrated inFIG. 1C can represent an exemplary embodiment of the source region 106,the gate region 108, and/or and the drain region 110 as described abovein FIG. 1A.

Referring to FIG. 1C, the source region 106, the metal rail conductor120 can be electrically connected to the terminal region 128 to provideelectrical connection between the metal rail conductor 120 and theterminal region 128. In the exemplary embodiment illustrated in FIG. 1B,the metal rail conductor 120 is sufficiently exposed within thedielectric region 126 to electrically connect to the terminal region 128to provide the electrical connection. As to be described in more detailbelow, a portion of dielectric region 126 can be removed through apatterning process, such as a dry etch or a wet etch to provide someexamples, during fabrication to expose the portion of the dielectricregion 126. Thereafter, the terminal region 128 can be deposited ontothe portion of the dielectric region 126 through a deposition wherematerial is grown, coated, or otherwise transferred. In an exemplaryembodiment, a height, namely along the z-axis of the Cartesiancoordinate system as illustrated in FIG. 1A, of the terminal region 128as illustrated in FIG. 1C is greater than a height of the terminalregion 124 as illustrated in FIG. 1B. In this exemplary embodiment, thisdifference in height between the terminal region 124 and the terminalregion 128 results from removing sufficient portions of the dielectricregion 126 to expose the metal rail conductor 120 to allow theelectrical connection between the metal rail conductor 120 and theterminal region 128.

FIG. 1D and FIG. 1E illustrate isometric views of a first exemplaryintegrated circuit and a second exemplary integrated circuit,respectively, each having non-planar semiconductor devices according toan exemplary embodiment of the present disclosure.

In the exemplary embodiment illustrated in FIG. 1D, an integratedcircuit 129 includes non-planar semiconductor devices situated onto adielectric region having multiple metal rail conductors situated within.The dielectric region can be selectively configured to allow electricalconnection between the multiple metal rail conductors and gate, source,and/or drain regions of the non-planar semiconductor devices or toprevent the electrical connection between the multiple metal railconductors and gate, source, and/or drain regions of the non-planarsemiconductor devices. In the exemplary embodiment illustrated in FIG.1D, the integrated circuit 129 includes a first finFET 130, having asource region 134.1, a gate region 136.1, and a drain region 138.1, anda second finFET 132, having a source region 134.2, a gate region 136.2,and a drain region 138.2, and a dielectric region 142 situated onto asemiconductor substrate 140. It should be noted that the integratedcircuit 129 as illustrated in FIG. 1D is for exemplary purposes only andthe integrated circuit 129 can include more finFETs configured in asubstantially similar manner as the first finFET 130 and the secondfinFET 132. In the exemplary embodiment illustrated in FIG. 1D, thefirst finFET 130 and the second first finFET 132 can represent exemplaryembodiments of the finFET 100 as described above in FIG. 1A. As such,the source region 134.1 and the source region 134.2 can representexemplary embodiments of the source region 106 as described above inFIG. 1A, the gate region 136.1 and the gate region 136.2 can representexemplary embodiments of the gate region 108 as described above in FIG.1A, and the drain region 138.2 and the drain region 138.1 can representexemplary embodiments of the drain region 110 as described above in FIG.1A. As illustrated in FIG. 1D, the drain region 138.1 and the drainregion 138.2 can be characterized as being a common drain region whichis shared between the first finFET 130 and the second finFET 132.

As illustrated in FIG. 1D, the integrated circuit 129 further includesmetal rail conductors 144.1 and 144.2 situated within the dielectricregion 142. The metal rail conductors 144.1 and 144.2 can representexemplary embodiments of the one or more metal rail conductors 114 asdescribed above in FIG. 1A. In the exemplary embodiment illustrated inFIG. 1D, the metal rail conductors 144.1 and 144.2 traverse a length ofthe semiconductor substrate 140 in the horizontal direction, namelyalong the x-axis of the Cartesian coordinate system as illustrated inFIG. 1A, between the source region 134.1 and the source region 134.2. Inthe exemplary embodiment illustrated in FIG. 1D and as illustrated incircle 146.1 in FIG. 1D, the metal rail conductor 144.1 can beelectrically connected to the source region 134.2 to provide electricalconnection between the source region 134.2 and the metal rail conductor144.1 as described above in FIG. 1C. In this exemplary embodiment, themetal rail conductor 144.1 can be electrically connected to the sourceregion 134.1 to provide electrical connection between the source region134.1 and the metal rail conductor 144.1 as described above in FIG. 1C.As such, the metal rail conductor 144.1 provides an electricalconnection between the source region 134.1 and the source region 134.2.However, in the exemplary embodiment illustrated in FIG. 1D and asillustrated in circle 146.2 in FIG. 1D, the dielectric region 142 isconfigured to prevent electrical connection between the metal railconductor 144.2 and the source region 134.1 as described above in FIG.1B. In this situation, the dielectric region 142 effectively isolatesthe metal rail conductor 144.2 from the source region 134.2 to preventthe electrical connection between the metal rail conductor 144.2 and thesource region 134.1. It should be noted that although only source region134.2 is shown to be electrically connected to metal rail conductor144.1 in FIG. 1D, other source/drain terminals can also be connected tometal rail conductors depending on the needs of circuitry design anddevice configuration. Because the metal rail conductors are formedwithin the dielectric region 142, they can electrically connect multiplesource/drain terminals without occupying additional device space.

As illustrated in FIG. 1E, an integrated circuit 150 includes finFETs152.1.1 through 152.m.n that are arranged in an array of m rows and ncolumns. However, other arrangements for the finFETs 152.1.1 through152.m.n are possible without departing from the spirit and scope of thepresent disclosure. In this exemplary embodiment, each of the m rowsincludes one or more metal rail conductors from among the one or moremetal rail conductors 154.1 through 154.a. In the exemplary embodimentillustrated in FIG. 1E, each of the finFETs 152.1.1 through 152.m.n canrepresent an exemplary embodiment of the finFET 100 as described abovein FIG. 1A and/or of the first finFET 130 and the second finFET 132 asdescribed above in FIG. 1D. It should be noted that although one sourceregion of finFETs 152.m.n is shown to be electrically connected to metalrail conductor 154.1 in FIG. 1E, other source/drain terminals can alsobe connected to metal rail conductors depending on the needs ofcircuitry design and device configuration. Because the metal railconductors are formed within the dielectric region, they canelectrically connect multiple source/drain terminals without occupyingadditional device space.

Electronic Design Platform for Forming Integrated Circuits Having theExemplary Non-Planar Semiconductor Devices

FIG. 2 illustrates a block diagram of an electronic design platformaccording to an exemplary embodiment of the present disclosure. Asillustrated in FIG. 2 , an electronic design platform 200 represents adesign flow including one or more electronic design softwareapplications, that when executed by one or more computing devices,processors, controllers, or other devices that will be apparent to thoseskilled in the relevant art(s) without departing from the spirit and thescope of the present disclosure, can design, simulate, analyze, and/orverify one or more high-level software level descriptions of analogand/or digital circuitry for an electronic device. In an exemplaryembodiment, the one or more high-level software level descriptions canbe implemented using a high-level software language, such as a graphicaldesign application, for example C, System C, C++, LabVIEW, and/orMATLAB, a general purpose system design language, such as like SysML,SMDL and/or SSDL, or any other suitable high-level software or generalpurpose system design language that will be apparent to those skilled inthe relevant art(s) without departing from the spirit and the scope ofthe present disclosure, or a high-level software format, such as CommonPower Format (CPF), Unified Power Formant (UPF), or any other suitablehigh-level software format that will be apparent to those skilled in therelevant art(s) without departing from the spirit and the scope of thepresent disclosure. In the exemplary embodiment illustrated in FIG. 2 ,the electronic design platform 200 includes a synthesis application 202,a placing and routing application 204, a simulation application 206, anda verification application 208.

Moreover, embodiments of the disclosure can be implemented in hardware,firmware, software, or any combination thereof. Embodiments of thedisclosure can also be implemented as instructions stored on amachine-readable medium, which can be read and executed by one or moreprocessors. A machine-readable medium can include any mechanism forstoring or transmitting information in a form readable by a machine(e.g., a computing device). For example, a machine-readable medium caninclude non-transitory machine-readable mediums such as read only memory(ROM); random access memory (RAM); magnetic disk storage media; opticalstorage media; flash memory devices; and others. As another example, themachine-readable medium can include transitory machine-readable mediumsuch as electrical, optical, acoustical, or other forms of propagatedsignals (e.g., carrier waves, infrared signals, digital signals, etc.).Further, firmware, software, routines, instructions can be describedherein as performing certain actions. However, it should be appreciatedthat such descriptions are merely for convenience and that such actionsin fact result from computing devices, processors, controllers, or otherdevices executing the firmware, software, routines, instructions, etc.In an exemplary embodiment, the synthesis application 202, the placingand routing application 204, the simulation application 206, and theverification application 208 represent one or more electronic designsoftware applications, which when executed by one or more computingdevices, processors, controllers, or other devices that will be apparentto those skilled in the relevant art(s) without departing from thespirit and the scope of the present disclosure, configure the one ormore computing devices, the processors, the controllers, or the otherdevices from being general purpose electronic devices into specialpurpose electronic devices to execute one or more of these applicationsas to be described in further detail below.

The synthesis application 202 translates one or more characteristics,parameters, or attributes of the electronic device into one or morelogic operations, one or more arithmetic operations, one or more controloperations, and/or any other suitable operation or operations that willbe apparent to those skilled in the relevant art(s) without departingfrom the spirit and the scope of the present disclosure into the one ormore high-level software level descriptions in terms of analog circuitryand/or digital circuitry of the electronic device. The synthesisapplication 202 can utilize a simulation algorithm to simulate the oneor more logic operations, one or more arithmetic operations, one or morecontrol operations, and/or the other suitable operation or operations toverify the one or more logic operations, one or more arithmeticoperations, one or more control operations, and/or the other suitableoperation perform in accordance with one or more characteristics,parameters, or attributes of the electronic device as outlined in anelectronic design specification.

The placing and routing application 204 translates the one or morehigh-level software level descriptions to form an electronicarchitectural design for the analog circuitry and/or the digitalcircuitry of the electronic device. The placing and routing application204 selectively chooses among one or more standard cells withinlibraries of standard cells to translate the one or more logicoperations, the one or more arithmetic operations, the one or morecontrol operations, and/or the other suitable operation or operations ofthe one or more high-level software level descriptions into geometricshapes and/or the interconnections between the geometric shapes to formthe electronic architectural design for the analog circuitry and/or thedigital circuitry of the electronic device. In an exemplary embodiment,at least one of the one or more standard cells includes one or morenon-planar semiconductor devices, such as the finFET 100 to provide anexample. In this exemplary embodiment, various conductive structuressuch as, for example, source regions, gate regions, and/or drain regionsof the one or more non-planar semiconductor devices can be electricallyconnected to one or more metal rail conductors, such as the one or moremetal rail conductors 114 to provide an example, within the one or morenon-planar semiconductor devices as described above in FIGS. 1A to 1E.

After selecting the one or more standard cells from the among librariesof standard cells, the placing and routing application 204 places theone or more selected standard cells onto an electronic device designreal estate. Thereafter, the placing and routing application 204 routesvarious interconnections between the one or more selected standard cellsin accordance with the one or more logic operations, the one or morearithmetic operations, the one or more control operations, and/or theother suitable operation or operations of the one or more high-levelsoftware level descriptions to form the electronic architectural designfor the analog circuitry and/or the digital circuitry of the electronicdevice. In an exemplary embodiment, the placing and routing application204 can electrically connect the one or more metal rail conductorsbetween adjacent standard cells from among the one or more selectedstandard cells.

The simulation application 206 simulates the electronic architecturaldesign for the analog circuitry and/or the digital circuitry of theelectronic device to replicate one or more characteristics, parameters,or attributes of the electronic architectural design for the analogcircuitry and/or the digital circuitry of the electronic device. In anexemplary embodiment, the simulation application 206 can provide astatic timing analysis (STA), a voltage drop analysis, also referred toan IREM analysis, a Clock Domain Crossing Verification (CDC check), aformal verification, also referred to as model checking, equivalencechecking, or any other suitable analysis. In a further exemplaryembodiment, the simulation application 206 can perform an alternatingcurrent (AC) analysis, such as a linear small-signal frequency domainanalysis, and/or a direct current (DC) analysis, such as a nonlinearquiescent point calculation or a sequence of nonlinear operating pointscalculated while sweeping a voltage, a current, and/or a parameter toperform the STA, the IREM analysis, or the other suitable analysis.

The verification application 208 verifies the one or morecharacteristics, parameters, or attributes of the electronicarchitectural design for the analog circuitry and/or the digitalcircuitry of the electronic device as replicated by the simulationapplication 206 satisfy the electronic design specification. Theverification application 208 can also perform a physical verification,also referred to as a design rule check (DRC), to check whether theelectronic architectural design for the analog circuitry and/or thedigital circuitry of the electronic device satisfies one or morerecommended parameters, referred to as design rules, as defined by asemiconductor foundry and/or semiconductor technology node forfabricating the electronic device.

Exemplary Fabrication of the Non-Planar Semiconductor Devices

FIG. 3A through FIG. 15C illustrate various views ofpartially-fabricated semiconductor structures where metal conductor railstructures formed in interlayer dielectric materials can be used toprovide electrical connection to and/or between multiple conductivestructures such as, for example, gate/source/drain terminals of finFETarrays according to exemplary embodiments of the present disclosure. Thedescription of follow can be used to fabricate a non-planarsemiconductor device, such as the finFET 100 as described above in FIG.1A, and/or an integrated circuit having one or more non-planarsemiconductor devices, such as the integrated circuit 129 as describedabove in FIG. 1D and/or the integrated circuit 150 as described above inFIG. 1E to provide some examples.

FIG. 3A is an isometric view of a partially-fabricated semiconductorstructure according to an exemplary embodiment of the presentdisclosure. A partially-fabricated semiconductor structure 300 includesportions of finFETs. As illustrated in FIG. 3A, the partially-fabricatedsemiconductor structure 300 includes a semiconductor substrate 302, finstructures 304, hard masks 306, dielectric spacers 308, and the seedlayer structures 309.

In the exemplary embodiment illustrated in FIG. 3A, the semiconductorsubstrate 302 can be a silicon substrate. However, the semiconductorsubstrate 302 can alternatively be (i) another semiconductor, such asgermanium; (ii) a compound semiconductor including silicon carbide,gallium arsenide, gallium phosphide, indium phosphide, indium arsenide,gallium arsenide phosphide (GaAsP), aluminum indium arsenide (AlInAs),aluminum gallium arsenide (AlGaAs), gallium indium arsenide (GaInAs),gallium indium phosphide (GaInP), gallium indium arsenide phosphide(GaInAsP), and/or indium antimonide; (iii) an alloy semiconductorincluding silicon germanium (SiGe); or (iv) combinations thereof. In anexemplary embodiment, semiconductor substrate 302 can be a semiconductoron insulator (SOI). In an exemplary embodiment, semiconductor substrate302 can be an epitaxial material.

As illustrated in FIG. 3A, the fin structures 304 can include fin-shapedsemiconductor material protruding from the substrate and can be inparallel (e.g., extending in the same direction) with each other. Thefin structures 304 include active regions where one or more transistorsare formed. The fin structures 304 can include: (i) silicon (Si) oranother elementary semiconductor, such as germanium; (ii) a compoundsemiconductor including silicon carbide, gallium arsenide, galliumphosphide, indium phosphide, indium arsenide, GaAsP, AlInAs, AlGaAs,GaInAs, GaInP, GaInAsP and/or indium antimonide; (iii) an alloysemiconductor including SiGe; or (iv) combinations thereof. The finstructures 304 can be fabricated using suitable processes includingpatterning and etch processes. The patterning process can includeforming a photoresist layer overlying the substrate (e.g., on a siliconlayer), exposing the resist to a pattern, performing post-exposure bakeprocesses, and developing the resist to form a masking element includingthe resist. The masking element can then be used to protect regions ofthe substrate while an etch process forms recesses into semiconductorsubstrate 302, leaving protruding fins. The recesses can be etched usinga reactive ion etch (RIE) and/or other suitable processes. Numerousother methods to form the fin structures 304 on semiconductor substrate302 may be suitable. For example, the fin structures 304 can includeepitaxial material, in accordance with some embodiments.

The hard masks 306 can be used to pattern, such as by etching, the finstructures 304. The hard masks 306 can also be used protect the finstructures 304 during subsequent processing steps. In an exemplaryembodiment, the hard masks 306 are formed on the top surfaces of the finstructures 304. The hard masks 306 can also be formed between the finstructures 304 and on top surfaces of semiconductor substrate 302. Thehard masks 306 can made of a dielectric material, such as siliconnitride, silicon oxide, silicon carbide, silicon carbon nitride, siliconoxycarbide, titanium oxide, other suitable dielectric material, and/orcombinations thereof. In an exemplary embodiment, the hard masks 306 isnot formed on the top surface of semiconductor substrate 302.

As illustrated in FIG. 3A, the isolation spacers 308 can partially fillthe recesses between the fin structures 304 and formed on the sidewallsof the fin structures 304. In an exemplary embodiment, the isolationspacers 308 can be made of a dielectric material such as, for example,silicon oxide, spin-on-glass, silicon nitride, silicon carbide, siliconcarbon nitride, silicon oxynitride, silicon oxycarbide, fluorine-dopedsilicate glass (FSG), a low-k dielectric material, other suitableinsulating material, and/or combinations thereof. In an exemplaryembodiment, the isolation spacers 308 can be formed by blanketdepositing an isolation material over the exposed surfaces and using ananisotropic etching process to remove horizontal portions of thedeposited isolation layer. The isolation spacers 308 can be deposited bychemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), other suitableprocesses, and/or combinations thereof. Other fabrication techniques forthe isolation spacers 308 and/or the fin structures 304 are possible.The isolation spacers 308 can include a multi-layer structure such as,for example, a structure with one or more sub-spacers or dielectricliner layers. The isolation spacers 308 can also be formed by depositingan enhanced spacer layer using multi-step deposition and treatmentprocess to eliminate voids and seams in the spacer material. In anexemplary embodiment, the isolation spacers 308 can be interlayerdielectric material. In an exemplary embodiment, the isolation spacers308 are formed directly on hard masks 306 and on the sidewalls of thefin structures 304, as shown in FIG. 3A. In an exemplary embodiment, theisolation spacers 308 are formed directly on semiconductor substrate 302and on the sidewalls of the fin structures 304.

As illustrated in FIG. 3A, seed layer materials 309 are formed on thesidewalls of isolation spacer 308. In an exemplary embodiment, seedlayer materials 309 can be formed of silicon material such as, forexample, silicon, silicon compounds, titanium nitride (TiN), tungsten,cobalt, other suitable materials, and/or combinations thereof. In anexemplary embodiment, seed layer materials 309 can have a different etchselectivity than the isolation spacers 308. In an exemplary embodiment,seed layer materials 309 are formed directly on semiconductor substrate302 and on the sidewalls of the isolation spacers 308. In an exemplaryembodiment, seed layer materials 309 can be formed by blanket depositinga semiconductor material over the exposed surfaces, patterning thedeposited semiconductor material, and using an anisotropic etchingprocess to remove exposed portions of the deposited seed layer materialnot protected by photoresists. In some embodiments, a patterning andetching process forms seed layer materials 309 on sidewalls of fin 304with uniform length L, as illustrated in FIG. 3A.

As illustrated in FIG. 3B, seed layer materials 309 are patterned andetched to form seed layer structures 310 using masking layer 320. Anexemplary patterning process can include forming a photoresist layerover the exposed surfaces of deposited seed layer material, exposing thephotoresist layer to a mask or reticle having a pattern thereon,performing a post-exposure bake process, and developing the resist toform a masking layer 320. In an exemplary embodiment, masking layer 320can be hard masks such as, for example, silicon nitride layers, othersuitable layers, and/or combinations thereof. Surface areas of seedlayer material that are not protected by masking layer 320 are etchedusing, for example, a reactive ion etching (RIE) processes, a wetetching process, other suitable processes, and/or combinations thereof.In an exemplary embodiment, the etching selectivity can be substantiallydifferent between seed layer material and other structures ofpartially-fabricated semiconductor structure 300 by controlling etchingparameters of the etch process such as, for example, etchant gas type,gas flow rate, etching temperature, plasma power, chamber pressure,other suitable parameters, and/or combinations thereof. For example, theetch process can be an RIE process using fluorocarbon gases such as CF₄,fluoroform (CHF₃), octafluoropropane (C₃F₈), other suitable etchantgases, and/or combinations thereof. The etch process can be ananisotropic etch process. Other fabrication techniques for the seedlayer structures 310 are possible. The seed layer structures 310 caninclude a multi-layer structure such as, for example, a structure withone or more liner layers. In some embodiments, after the blanketdeposition of seed layer material, seed layer structures 310 can beformed using a single patterning/etching process.

The length of seed layer structures 310, measured along the fin length,can vary based on device needs, for example, the length of subsequentlyformed metal drain channels. FIG. 3B illustrates seed layer structures310 with different lengths such as, for example, lengths L1 and L2. Asillustrated in FIG. 3B, top surfaces of hard masks 306, isolationspacers 308, and seed layer structures 310 can be substantially at thesame level by performing suitable planarization processes on the topsurfaces of these structures. The planarization process can be, forexample, a chemical mechanical polishing (CMP) process.

FIG. 3C illustrates partially-fabricated semiconductor structure 300after a photoresist removal process. Photoresist 320 can be removedusing any suitable processes such as, wet chemical process, dry etchingprocess, and/or any combinations thereof. After the removal process, topsurfaces of hard masks 306, isolation spacers 308, and seed layerstructures 310 are exposed.

FIG. 4 is an isometric view of a partially-fabricated semiconductorstructure after gap fill is formed in openings and seed layer structuresare partially removed according to an exemplary embodiment of thepresent disclosure. Partially-fabricated semiconductor structure 400includes the semiconductor substrate 302, the fin structures 304, thehard masks 306, the dielectric spacers 308, seed layer structures 410,and gap fill structures 402.

As illustrated in FIG. 4 , the gap fill structures 402 can fill theopenings in the partially-fabricated semiconductor structure 400 asdescribed in FIG. 3A above. The gap fill structures 402 can fill theopenings formed between any adjacent structures such as, for example,between adjacent fin structures 304, between opposing fin structures 304and the seed layer structures 410, between opposing the seed layerstructures 410, and/or other openings between structures. In anexemplary embodiment, the gap fill structures 402 can be made of adielectric material similar to the isolation spacers 308, such as, forexample, silicon oxide, spin-on-glass, silicon nitride, silicon carbide,silicon carbon nitride, silicon oxynitride, silicon oxycarbide, FSG, alow-k dielectric material, other suitable insulating material, and/orcombinations thereof. In an exemplary embodiment, the gap fillstructures 402 can be formed by blanket depositing a gap fill materialover the exposed surfaces and in the openings and performing aplanarization process to remove the excessive gap fill material that isformed over the top surfaces of the hard masks 306 and the seed layerstructures 410 such that the top surfaces of partially-fabricatedsemiconductor structure 400 are substantially at the same level.Exemplary planarization processes can include CMP processes. The gapfill structures 402 can be deposited by CVD, PECVD, PVD, ALD, othersuitable processes, and/or combinations thereof. Other fabricationtechniques for the gap fill structures 402 are possible. The gap fillstructures 402 can include a multi-layer structure such as, for example,a structure with one or more liner layers. The gap fill structures 402can also be formed by depositing an enhanced gap fill layer usingmulti-step deposition and treatment process to eliminate voids and seamsin the spacer material.

After the gap fill structures 402 are formed, the seed layer structures310 are etched back to form the seed layer structures 410. The seedlayer structures 310 can be etched by any suitable etching processes forexample, an RIE processes, a wet etching process, other suitableprocesses, and/or combinations thereof. In an exemplary embodiment, theetching process can be an anisotropic etching process. In an exemplaryembodiment, the etching selectivity can be substantially differentbetween seed layer material and other structures of thepartially-fabricated semiconductor structure 400 by controlling etchingparameters of the etch process. The etching process can continue until anominal thickness of the partially-fabricated semiconductor structure400 is reached. In an exemplary embodiment, the thickness of the seedlayer structures 410 can be in a range of between about 5 Å to about 15Å (e.g., 5 Å to 15 Å). In an exemplary embodiment, the seed layerstructures 410 can have a thickness of about 10 Å. The thickness of theseed layer structures 410 can be determined by a few factors, includingbut not limited to, the thickness uniformity and impact on conductivity.For example, a reduced seed layer thickness may impact the uniformity ofthe seed layer thickness, while a greater thickness may impact theoverall conductivity of the subsequently formed metal rail conductors.

FIG. 5A-5B are isometric views of a partially-fabricated semiconductorstructure after metal rail conductors and interlayer dielectric fillsare formed according to an exemplary embodiment of the presentdisclosure. As illustrated in FIG. 5A, partially-fabricatedsemiconductor structure 500 includes the semiconductor substrate 302,the fin structures 304, the hard masks 306, the dielectric spacers 308,the gap fill structures 402, the seed layer structures 410, metal railconductors 502, and dielectric fill 504. In an exemplary embodiment, thedielectric spacers 308, the gap fill structures 402, and the dielectricfill 504 can be formed of the same material. For simplicity purposesthey are combined and illustrated as an interlayer dielectric (ILD) 506as illustrated in FIG. 5B.

As illustrated in FIG. 5A, the metal rail conductors 502 can be formedon the seed layer structures 410. In an exemplary embodiment, the metalrail conductors 502 can be formed of any suitable materials such astungsten, cobalt, copper, aluminum, other suitable materials, and/orcombinations thereof. In an exemplary embodiment, the metal railconductors 502 can be formed using metal alloys of the above listedmaterial. The top surface of the metal rail conductors 502 can be asubstantially smooth surface. The metal rail conductors 502 can beformed using the seed layer structures 410 as a seed layer where thegrowth of the metal rail conductors 502 is started. For example, themetal rail conductors 502 can start forming from the top surface of theseed layer structures 410 until a nominal thickness of the metal railconductor is achieved. In an exemplary embodiment, the growth of metalrail conductor material can be completed using suitable processes suchas CVD, electroplating, electroless plating, other suitable processes,and/or combinations thereof. For example, tungsten material can beformed using silicon material as a seed layer. The height of the metalrail conductors 502 can be in a range between about 0.8 to about 1.2times the gate pitch of the finFET devices. In an exemplary embodiment,the width of metal rail conductors can be in a range between about 0.8to about 2.2 times the width of the fin structures 304. In an exemplaryembodiment, the pitch of metal rail conductors (i.e., the distancebetween centers of adjacent metal rail conductors) can be in a rangebetween about 0.8 to about 1.2 times the fin pitch of the fin structures304. In an exemplary embodiment, each the metal rail conductors 502 canhave substantially similar widths or heights. In an exemplaryembodiment, the widths or heights can be different between each of themetal rail conductors 502.

After the metal rail conductors 502 are formed, the dielectric fills 504are formed over the metal rail conductors 502 and filling the openingswithin the gap fill structures 402. In an exemplary embodiment, thedielectric fills 504 can be formed by performing a blanket deposition ofdielectric fill material on the structure until the openings within thegap fill structures 402 are completely filled. A planarization processis subsequently performed to remove the excessive dielectric fillmaterial and planarize the dielectric fill material until the topsurfaces of the dielectric fill material are substantially at the samelevel with the hard masks 306. After the planarization process, theplanarized dielectric fill material forms the dielectric fills 504. Inan exemplary embodiment, the dielectric fills 504 can be formed usingthe same material as dielectric spacers 308 and the gap fill structures402. For example, the dielectric fills 504 can be formed using siliconoxide, spin-on-glass, silicon nitride, silicon carbide, silicon carbonnitride, silicon oxynitride, FSG, a low-k dielectric material, othersuitable insulating material, and/or combinations thereof. In somesituations, the dielectric spacers 308, the gap fill structures 402, andthe dielectric fills 504 can be formed using the same material asillustrated as the ILD 506 in FIG. 5B for simplicity. Subsequentfabrication steps will be based upon the structure shown in FIG. 5B.

FIG. 6 is an isometric view of a partially-fabricated semiconductorstructure after etching back the ILD layer and forming poly gates overthe fins according to an exemplary embodiment of the present disclosure.Partially-fabricated semiconductor structure 600 includes thesemiconductor substrate 302, the fin structures 304, the hard masks 306,the seed layer structures 410, the metal rail conductors 502,partially-etched ILD 602, and poly gate structures 604.

In the exemplary embodiment illustrated in FIG. 6 , the ILD 506 frompartially-fabricated semiconductor structure 500 of FIG. 5B is uniformlyetched until a nominal depth is achieved. The etching process can be anisotropic etching process where the etched thickness of the ILD 506 isuniform across the semiconductor structure. The ILD 506 formspartially-etched ILD 602 after the etching process. After the etchingprocess, portions of the fin structures 304 can protrude from the topsurfaces of the partially-etched ILD 602. The amount of the ILD 506removed can depend upon a few factors. First, the protruding portions ofthe fin structures 304 are used to form the active portions of finFETdevices in subsequent fabrication steps. For example, the protrudingportions of the fin structures 304 represent active portions of the finthat are used to form the channel and source/drain regions of the finFETdevices. Therefore, a sufficient height for the fin structures 304 canbe above the top surfaces of partially-etched ILD 602. Second, the metalrail conductors 502 should remain under partially-etched ILD 602 afterthe etching process without being exposed.

After the partially-etched ILD 602 is formed, the poly gate structures604 can be formed on the exposed surfaces of the fin structures 304including top surfaces and sidewall surfaces not covered by thepartially-etched ILD 602. In an exemplary embodiment, portions of thehard masks 306 can be patterned and removed before depositing the polygate material such that the poly gate structures 604 can form directlyon the top surfaces of the fin structures 304. In an exemplaryembodiment, removing the hard mask layer includes performing a wetchemical process with phosphoric acid (H₃PO₄) that etches siliconnitride. The poly gate structures 604 can be formed by blanketdepositing a semiconductor material and performing patterning andetching processes. The poly gate structures 604 can include a gatedielectric layer, a gate electrode structure, and/or one or moreadditional layers, according to some embodiments. In an exemplaryembodiment, the poly gate structures 604 use polysilicon as the gateelectrode structures. In an exemplary embodiment, the poly gatestructures 604 use amorphous silicon as the gate electrode structure. Inan exemplary embodiment, the poly gate structures 604 can be sacrificialgate structures such as formed in a gate replacement process used toform metal gate structures. In an exemplary embodiment, a hard mask (notshown in FIG. 6 ) is disposed on a top surface of the poly gatestructures 604. The hard mask can be used to pattern, such as byetching, semiconductor material to form the poly gate structures 604. Inan exemplary embodiment, the hard mask can be made of a dielectricmaterial, such as silicon nitride. In an exemplary embodiment, the polygate pitch (i.e., the distance between centers of adjacent poly gatestructures 604) can be in a range between about 10 nm to about 300 nm.In an exemplary embodiment, the poly gate length L_(g) can be in a rangebetween about 3 nm to about 80 nm.

FIG. 7A and FIG. 7B are an isometric views of a partially-fabricatedsemiconductor structure for opening a trench in the partially-etched ILDto expose portions of metal rail conductors, according to an exemplaryembodiment of the present disclosure. Partially-fabricated semiconductorstructure 700 includes the semiconductor substrate 302, the finstructures 304, the hard masks 306, the seed layer structures 410, themetal rail conductors 502, the partially-etched ILD 602, the poly gatestructures 604, and trenches 702 formed in the partially-etched ILD 602.

One or more patterning and etching processes can be used to exposeportions of metal rail conductors. For example, as illustrated in FIG.7A, the patterning process can include forming a photoresist layeroverlying the structure (e.g., on the poly gate structures), exposingthe resist to a pattern, performing post-exposure bake processes, anddeveloping the resist to form a masking layer 704. Due to the smallfeature size and pitch between adjacent poly gate structures 604, thepatterned masking layer can have sufficient mechanical strength tosuspend between adjacent poly gate structures or hang as a ledge overthe edge of a poly gate structure.

FIG. 7B illustrates partially-fabricated semiconductor structure afteran etching process to expose portions of metal rail conductors and aremoval process to remove the masking layer. After patterned maskinglayer 704 is formed, one or more etching processes can be performed toremove the exposed partially-etched ILD 602 and expose the selectedunderlying the metal rail conductors 502. In the exemplary embodimentillustrated in FIG. 7B, the trenches 702 are formed between adjacentpoly gate structures 604 and in the partially-etched ILD 602. Thetrenches 702 are used to expose portions of one or more of the metalrail conductors 502 that are formed between adjacent poly gatestructures 604 such that subsequent structures (e.g., conductivestructures such as, for example, source/drain contacts and/or gatecontacts) can form direct electrical contact with the metal railconductors 502. The specific the metal rail conductors 502 to be exposeddepend on circuit designs and can be one or more of the metal railconductors 502. The fabrication process to expose selected the metalrail conductors 502 can include patterning and removing portions of thepartially-etched ILD 602 that are formed over the selected the metalrail conductors 502. In an exemplary embodiment, an entire area of thepartially-etched ILD 602 that is surrounded by opposing adjacent finstructures 304 and opposing adjacent poly gate structures 604 is etchedto expose the underlying metal rail conductors 502. Exposing the entirearea described above maximizes contact area to the metal rail conductors502 and thus provides the benefit of minimizing contact resistance tothe metal rail conductors 502. In an exemplary embodiment, only portionsof the area are exposed. For example, metal rail conductor regions 502Aand 502B of the metal rail conductors 502 are exposed as illustrated inFIG. 7B. Patterning and exposing a portion of the area provides thebenefit of a greater tolerance to lithography alignment as it reducesthe possibility of exposing unwanted adjacent areas of thepartially-etched ILD 602 in case a misalignment occurs. In an exemplaryembodiment, the area exposed depends on the circuit and device needs andconsiderations. FIG. 8 is an isometric view of a partially-fabricatedsemiconductor structure after source/drain terminals are formedaccording to an exemplary embodiment of the present disclosure.Partially-fabricated semiconductor structure 800 includes thesemiconductor substrate 302, the fin structures 304, the seed layerstructures 410, the metal rail conductors 502, the partially-etched ILD602, the poly gate structures 604, and epitaxial source/drain terminals802.

In the exemplary embodiment illustrated in FIG. 8 , each finFET includesa pair of source/drain terminals. The source and drain terminals areinterchangeable and are formed in, on, and/or surrounding the finstructures 304. A source or drain terminal is formed on one side of apoly gate structure. In an exemplary embodiment, adjacent finFET devicesshare a common source/drain terminal. Channel regions of the finstructures 304 underlie the respective the poly gate structures 604. Oneor more epitaxial source/drain terminals 802 directly contact and areelectrically connected to the exposed metal rail conductors. Forexample, epitaxial source/drain terminals 802A and 802B of epitaxialsource/drain terminals 802 respectively connects to metal rail conductorregions 502A and 502B. Although only epitaxial source/drain terminals802A and 802B are shown to be connected in FIG. 8 , other source/drainterminals can also be connected depending on the design and deviceneeds. Because the metal rail conductors are formed within thepartially-etched ILD 602, they can electrically connect multiplesource/drain terminals without occupying additional device space.

As illustrated in FIG. 8 , the epitaxial source/drain terminals 802 canbe formed on active fin structures of the fin structures 304 that areprotruding from the top surface of the partially-etched ILD 602. In anexemplary embodiment, the epitaxial source/drain terminals 802 can beepitaxial source/drains terminals that are formed by growing epitaxiallayers over exposed surfaces of fin 304. In an exemplary embodiment, thehard masks 306 are removed from the top of the fin structures 304 priorto the formation of the epitaxial source/drain terminals 802. In anexemplary embodiment, the fin structures 304 are formed using epitaxialmaterial such as epitaxial silicon, epitaxial silicon germanium (SiGe),gallium arsenide, other suitable materials, and/or combinations thereof.Growing the epitaxy layers on exposed surfaces of the fin structures 304can include performing a pre-clean process to remove the native oxide onthe surface of the fin structures 304. Next, an epitaxy process isperformed to grow the epitaxy layers on the exposed surfaces of the finstructures 304. In an exemplary embodiment, the epitaxy process is anSiGe epitaxy process performed at a temperature between about 400° C.and about 500° C. (e.g., between 400° C. and 500° C.). The epitaxyprocess is a selective process that only grows the epitaxy layer on theexposed surfaces of the active fin structures. The epitaxy process canuse the exposed surfaces of the fin structures 304 as seed layers andthe growth process continues until a nominal size and/or structure ofsource/drain terminals has been reached. An in-situ doping process canalso be performed during the epitaxy process. In an exemplaryembodiment, epitaxial source/drain terminal 802 is a SiGe structure. Inan exemplary embodiment, the epitaxial source/drain terminals 802 can bea silicon structure. In an exemplary embodiment, the thickness of theepitaxial source/drain terminals 802 is between about 10 nm and about 20nm (e.g., between 10 nm and 20 nm). In an exemplary embodiment, theepitaxial source/drain terminals 802 are doped with p-type or n-typedopants during the epitaxy process. For example, the epitaxialsource/drain terminals 802 can be doped with boron (B) during theepitaxy process. The epitaxial source/drain terminals 802 can also takedifferent shapes depending on various factors such as, for example, theepitaxy process condition, the crystalline orientation of active finstructures, and/or other suitable factors. In an exemplary embodiment,the shape of the epitaxial source/drain terminals 802 using epitaxialmaterial have a substantially diamond-shaped cross section. In anexemplary embodiment, top surfaces of the epitaxial source/drainterminals 802 can be recessed below top surfaces of the poly gatestructures 604 as illustrated in FIG. 8 . In an exemplary embodiment,the top surfaces of the epitaxial source/drain terminals 802 aresubstantially at the same level as the top surfaces of the poly gatestructures 604.

FIG. 9 is an isometric view of a partially-fabricated semiconductorstructure after shallow trench isolation structures are formed accordingto an exemplary embodiment of the present disclosure.Partially-fabricated semiconductor structure 900 includes thesemiconductor substrate 302, the fin structures 304, the seed layerstructures 410, the metal rail conductors 502, the partially-etched ILD602, the poly gate structures 604, and shallow trench isolation (STI)structures 902.

As illustrated in FIG. 9 , the STI structures 902 can be deposited inopenings of the partially-fabricated semiconductor structure 800described above with reference to FIG. 8 . The STI structures 902 can beused to provide electrical isolation and mechanical support forsubsequently formed structures. The STI structures 902 can be formedusing dielectric material such as, for example, silicon oxide,spin-on-glass, silicon nitride, silicon oxynitride, FSG, a low-kdielectric material, other suitable insulating material, and/orcombinations thereof. The STI structures 902 can be formed by depositinginsulating dielectric material to fill the openings followed by aplanarization process (e.g., a CMP process). The STI structures 902 canbe deposited by CVD, PECVD, PVD, ALD, other suitable processes, and/orcombinations thereof. Other fabrication techniques for the STIstructures 902 are possible. The STI structures 902 can include amulti-layer structure such as, for example, a structure with one or moreliner layers. The STI structures 902 can also be formed by depositing anenhanced gap fill layer using the multi-step deposition and treatmentprocess to eliminate voids and seams in the dielectric material. Afterthe planarization process, the top surfaces of the poly gate structures604 and the STI structures 902 are substantially at the same level.

FIG. 10 is an isometric view of a partially-fabricated semiconductorstructure after a gate replacement process according to an exemplaryembodiment of the present disclosure. Partially-fabricated semiconductorstructure 1000 includes the semiconductor substrate 302, the finstructures 304, the seed layer structures 410, the metal rail conductors502, the partially-etched ILD 602, the STI structures 902, and metalgate structures 1002.

As described above with reference to FIG. 6 , although the poly gatestructures 604 are described as using polysilicon or amorphous silicon,the poly gate structures 604 can be sacrificial gate structures such asformed in a replacement gate process used to form metal gate structures.For example, the poly gate structures 604 can be replaced by a metalgate structures 1002 as illustrated in FIG. 10 . The metal gatestructures 1002 can further include barrier layer(s), gate dielectriclayer(s), work function layer(s), fill metal layer(s), and/or othersuitable materials for metal gate structures. In an exemplaryembodiment, the metal gate structures 1002 can include capping layers,etch stop layers, and/or other suitable materials. The gate replacementprocess can be a self-aligned gate replacement process where noalignment is needed. For example, the gate replacement process can beginby removing the poly gate structures 604 through an etching process suchas, for example, a dry etching process, a wet etching process, othersuitable processes, and/or combinations thereof. The removal of the polygate structures 604 leaves openings in the partially-fabricatedsemiconductor structure 1000. Conductive material used to form the metalgate structures 1002 can be then blanket deposited over the openings. Asubsequent planarization process can then be used such that the topsurfaces of STI structures 902 and the metal gate structures 1002 aresubstantially at the same level. After the planarization process, thedeposited metal gate material forms the metal gate structures 1002.Because the deposited metal gate material forms in the openings withoutthe need of alignment, the gate replacement process is a self-alignedprocess.

FIG. 11A is an isometric view of a partially-fabricated semiconductorstructure after forming metal source/drain contacts according to anexemplary embodiment of the present disclosure. Partially-fabricatedsemiconductor structure 1100 includes the semiconductor substrate 302,the fin structures 304, the seed layer structures 410, the metal railconductors 502, the partially-etched ILD 602, the metal gate structures1002, etched STI structures 1102, and source/drain contacts 1104. FIG.11B is a cross-sectional view of partially-fabricated semiconductorstructure 1100 along the A-A′ line illustrated in FIG. 11A. Thediscussion below of elements of partially-fabricated semiconductorstructure 1100 in FIG. 11A applies to elements in FIG. 11B with the sameannotations unless mentioned otherwise. It will be recognized that theviews of partially-fabricated semiconductor structure 1100 are shown forillustration purposes and may not be drawn to scale. As illustrated inFIGS. 11A-11B, epitaxial source/drain terminal 802A is electricallyconnected to metal rail conductors 502A.

In the exemplary embodiment illustrated in FIGS. 11A-11B, thesource/drain contacts 1104 can be metallic contacts that are formeddirectly on the epitaxial source/drain terminals 802 and used to provideelectrical connection to the epitaxial source/drain terminals 802. Insome embodiments, source/drain contacts 1104 can be formed in on theepitaxial source/drain terminals 802A and in physical contact with metalrail conductors 502A. In such scenarios, source/drain terminals 802A canbe etched to expose a portion of underlying metal rail conductors 502A,and source/drain contacts 1104 can be deposited on and in contact withmetal rail conductors 502A. In addition, various of conductivestructures can be formed in partially-fabricated semiconductor structure1100, such as vias and transistor devices. In some embodiments, vias canbe formed on metal rail conductors 502A by etching through source/drainterminals 802 or 802A. In some embodiments, vias can be formed byforming openings in partially-etched ILD 602, exposing underlying metalrail conductors 502 or 502A, and depositing conductive material in theopenings to form vias. The vias can provide electrical connectionsbetween metal rail conductors 502 or 502A and other components ofpartially-fabricated semiconductor structure 1100. As shown in FIG. 11B,the protruding portions of the fin structures 304 represent active finportions 1120 of the fin that are used to form the channel andsource/drain regions of the finFET devices. The portions of the finstructures 304 buried in partially-etched ILD 602 represent non-activefin portions 1130 of the fin. Source/drain contacts 1104 can be formedon active fin regions 1120 of fin structures 304 and above non-activefin regions 1130. Patterning and etching processes can be used to formopenings in the STI structures 902 for the deposition of source/draincontact material. In an exemplary embodiment, STI material can beremoved from between opposing the metal gate structures 1002 to exposeunderlying the epitaxial source/drain terminals 802. In an exemplaryembodiment, this STI material can remain between adjacent fin structures304 to provide electrical isolation. The etched STI structures 1102 areformed by patterning and etching the STI material to expose theunderlying the epitaxial source/drain terminals 802. In an exemplaryembodiment, the source/drain contacts 1104 are formed by a blanketdeposition using an ALD process, a CVD process, a PVD process, or acombination thereof. In an exemplary embodiment, the source/draincontacts 1104 can be made of metal such as, for example, cobalt (Co),tungsten (W), copper (Cu), nickel (Ni), ruthenium (Ru), or othersuitable materials. In an exemplary embodiment, a planarization process(e.g., a CMP process) is performed to remove excessive source/draincontact material of the source/drain contacts 1104 that are formed overthe top surfaces of the STI structures 902 and the metal gate structures1002. The source/drain contacts 1104 can be formed after theplanarization process, and the top surfaces of the source/drain contacts1104, the etched STI structures 1102, and the metal gate structures 1002are substantially at the same level. In an exemplary embodiment, thesource/drain contacts 1104 can further include a barrier layer formedbetween the source/drain contacts and STI structures 1102 to avoiddiffusion of materials from the source/drain contacts 1104 into theetched STI structures 1102.

In an exemplary embodiment, forming the source/drain contacts 1104 canfurther include forming a silicide layer between the source/draincontacts 1104 and the epitaxial source/drain terminals 802. In anexemplary embodiment, an etch process is performed to recess the topsurfaces of the epitaxial source/drain terminals 802 to form a flatsurface for the source/drain contacts. In an exemplary embodiment,recessing the epitaxial source/drain terminals 802 increases the contactarea between the source/drain contacts 1104 and the epitaxialsource/drain terminals 802 which can reduce contact resistance. In anexemplary embodiment, forming the silicide layer is performed by asilicidation process that includes depositing a metal layer, causing themetal to react with the epitaxy layers or the active fin structures, andremoving the un-reacted metal layer. In an exemplary embodiment, thesilicide layer can include cobalt silicide (CoSi_(x)), nickel silicide(NiSi_(x)), other suitable silicide layers, and/or combinations thereof.

FIG. 12A is an isometric view of a partially-fabricated semiconductorstructure after forming metal source/drain contacts according to anexemplary embodiment of the present disclosure. Partially-fabricatedsemiconductor structure 1200 includes similar structures aspartially-fabricated semiconductor structure 1100 of FIG. 11A. FIG. 12Bis a cross-sectional view of partially-fabricated semiconductorstructure 1200 along the B-B′ line illustrated in FIG. 12A. Thediscussion below of elements of partially-fabricated semiconductorstructure 1200 in FIG. 12A applies to elements in FIG. 12B with the sameannotations unless mentioned otherwise. It will be recognized that theviews of partially-fabricated semiconductor structure 1200 are shown forillustration purposes and may not be drawn to scale. As illustrated inFIGS. 12A-12B, epitaxial source/drain terminal 802A is electricallyconnected to metal rail conductor 502A embedded in partially-etched ILD602.

As illustrated in FIGS. 12A-12B, partially-fabricated semiconductorstructure 1200 includes the metal rail conductors 502 formed on one sideof the fin structures 304. The metal rail conductors 502 shown in FIGS.12A-12B can be formed using processes similar to the processes describedabove with reference to FIGS. 3-11B, however, the processes to form themetal rail conductors 502 can occur on one side of the fin structures304. For example, for each fin structure 304, the fabrication processcan form the seed layer structures 310 on one of the spacers 308 ratherthan on both spacers. Therefore, subsequent fabrication processes wouldform one metal rail conductor 502 for each fin structure 304. In anexemplary embodiment, the one metal rail conductor 502A can be used toconnect the source/drain terminals of the finFETs arrays, for example,source/drain terminal 802A. It should be noted that finFET arrays areprovided merely as examples, however, metal rail structures can also beformed in any other semiconductor structures without departing from thescope of the present disclosure.

FIGS. 13-15A are isometric views of partially-fabricated semiconductorstructures where metal conductor rail structures formed in interlayerdielectric materials can be used to provide electrical connectionbetween multiple gate structures of finFET arrays.

FIG. 13 is an isometric view of a partially-fabricated semiconductorstructure after forming removing the poly gate material according to anexemplary embodiment of the present disclosure. Partially-fabricatedsemiconductor structure 1300 includes structures similar to thestructures formed in FIGS. 3-9 . For example, partially-fabricatedsemiconductor structure 1300 includes a substrate 1302, fin structures1304, partially-removed seed layer structures 1306, metal railconductors 1308, partially-etched ILD 1310, epitaxial source/drainterminals 1312, and STI structures 1314 that are similar to theirrespective structures in FIGS. 3-9 . In an exemplary embodiment,partially-fabricated semiconductor structure 1300 can be formed afterremoving the poly gate structures 604 of FIG. 9 . In an exemplaryembodiment, other processes and methods to form partially-fabricatedsemiconductor structure 1300 can be used. Poly gate structures can beremoved by any suitable removal process such as, for example, a dry RIEetch process, a wet etch process, other suitable removal processes,and/or combinations thereof. In an exemplary embodiment, the removalprocess can be a self-aligned removal process where no patterningprocess is needed. For example, the removal process can have high etchselectivity of the poly gate material over other exposed structures so amask material is not needed to shield the other exposed structures. Inan exemplary embodiment, exposed structures other than the poly gatestructures can be covered to provide further protection from the removalprocess. The removal process can continue until the poly gate materialis completely removed and the underlying fin structures 1304 andpartially-etched ILD 1310 are exposed, as illustrated in FIG. 13 . Afterthe removal process, metal rail conductors 1308 remain underpartially-etched ILD 1310. For example, metal rail conductors 1308A and1308B are protected by partially-etched ILD 1310 and not exposed to theetching process.

FIG. 14 is an isometric view of a partially-fabricated semiconductorstructure after opening a trench in the partially-etched ILD to exposeportions of metal rail conductors according to an exemplary embodimentof the present disclosure. Partially-fabricated semiconductor structure1400 includes a substrate 1302, fin structures 1304, partially-removedseed layer structures 1306, metal rail conductors 1308, partially-etchedILD 1310, epitaxial source/drain terminals 1312, STI structures 1314,and trenches 1402 formed in the partially-etched ILD 1310.

In the exemplary embodiment illustrated in FIG. 14 , the trenches 1402are formed in selective openings where poly gate material has beenremoved. Similar to the trenches 702, the trenches 1402 are used toexpose portions of one or more metal rail conductors 1308 such thatsubsequent structures (e.g., gate electrodes) can form direct electricalcontact with metal rail conductors 1308. The specific metal railconductors 1308 to be exposed depend on circuit designs and can be oneor more metal rail conductors 1308 of the partially-fabricatedsemiconductor structure. In an exemplary embodiment, the fabricationprocess to expose selected metal rail conductors 1308 can be similar tothe fabrication process described above with reference to FIGS. 7A and7B. As illustrated in FIG. 14 , portions of metal rail conductors 1308Aand 1308B are exposed by forming the trenches 1402. The trench formingprocess can be similar to the trench forming process described abovewith reference to FIG. 7A and FIG. 7B, for example, the trench formingprocess can include patterning and removing portions of partially-etchedILD 1310.

FIG. 15A is an isometric view of a partially-fabricated semiconductorstructure after depositing metal gate material and forming source/draincontacts according to an exemplary embodiment of the present disclosure.Partially-fabricated semiconductor structure 1500 includes the substrate1302, the fin structures 1304, the partially-removed seed layerstructures 1306, the metal rail conductors 1308, the partially-etchedILD 1310, the STI structures 1314, metal gate structures 1502, andsource/drain contacts 1504. FIG. 15B is a cross-sectional view ofpartially-fabricated semiconductor structure 1500. In some embodiments,metal gate structures 1502A can be electrically connected to one or moremetal rail conductors 1308A embedded in partially-etched ILD 1310. FIG.15C illustrates a partially-fabricated semiconductor structure havingsingle metal rail conductors formed adjacent to each fin structure.

In the exemplary embodiment illustrated in FIGS. 15A-15B, the conductivematerial used to form the metal gate structures 1502 can be blanketdeposited followed by a planarization process. In an exemplaryembodiment, the deposition of conductive material and formation of metalgate structures 1502 can be similar to the formation of the metal gatestructures 1002 as described above with reference to FIG. 10 . In anexemplary embodiment, other formation processes can be used. After metalgate structures 1502 are formed, one or more metal gate structures 1502can be electrically connected to metal rail conductors directly. Forexample, metal gate structure 1502A is formed around one of the finstructures 1304 and also in trench 1402, directly connecting tounderlying metal rail conductors 1308A and 1308B. As shown in FIG. 15B,the protruding portions of the fin structures 1304 represent active finportions 1520 of the fin that are used to form the channel andsource/drain regions of the finFET devices. The portions of the finstructures 1304 buried in partially-etched ILD 602 represent non-activefin portions 1530 of the fin. Metal gate structures 1502 can be formedon active fin regions 1520 of fin structures 1304 and above non-activefin regions 1530. In some embodiments, a single metal rail conductor1308A is formed adjacent to fin structure 1304, as illustrated in FIG.15C, and metal gate structure 1502A is electrically connected to metalrail conductor 1308A. In an exemplary embodiment, other metal gatestructures 1502 can be connected to metal rail conductors 1308A and1308B. Because the metal rail conductors are formed within the ILDlayer, they can electrically connect multiple metal gate structureswithout occupying additional device space.

In the exemplary embodiment illustrated in FIG. 15A, the source/draincontacts 1504 can be metallic contacts that are formed directly on theepitaxial source/drain terminals 1312 and used to provide electricalconnection to the epitaxial source/drain terminals 1312. Similar toforming the source/drain contacts 1104 described above with reference toFIGS. 11A-11B, patterning and etching processes can be used to formopenings in the STI structures 1314 for the deposition of source/draincontact material. In an exemplary embodiment, portions of STI materialcan be removed from between opposing metal gate structures 1502 toexpose underlying epitaxial source/drain terminals 1312. In an exemplaryembodiment, STI material remains between adjacent fins to provideelectrical isolation.

FIG. 16 is a flow diagram of an example method of forming metal railconductors in an ILD layer according to an exemplary embodiment of thepresent disclosure. Other operations in method 1600 can be performed andoperations of method 1600 can be performed in a different order and/orvary.

At operation 1602, structures and layers are formed on and/or within asemiconductor structure, in accordance with some embodiments. Thesemiconductor structure includes portions of finFETs. For example, thesemiconductor structure includes a semiconductor substrate, finstructures, hard masks, dielectric spacers, and seed layer structures.The semiconductor substrate can be a silicon semiconductor substrate,according to some embodiments. In an exemplary embodiment, thesemiconductor substrate can be a semiconductor on insulator (SOI). In anexemplary embodiment, the semiconductor substrate can be an epitaxialmaterial. An example of a semiconductor substrate is the semiconductorsubstrate 302 described in FIG. 3 . Fin structures represent activeregions where one or more transistors are formed. The fin structures caninclude silicon or another elementary semiconductor. The fin structurescan be fabricated using suitable processes including patterning and etchprocesses. The fin structures can include epitaxial material, inaccordance with some embodiments. The fin structures can represent anexemplary embodiment of the fin structures 304 as described above inFIG. 3 . The hard masks can be used to form the fin structures. The hardmasks can also be used protect the fin structures during subsequentprocessing steps. In an exemplary embodiment, the hard masks are formedon the top surfaces of the fin structures. The hard masks can also beformed between the fin structures and on top surfaces of thesemiconductor substrate. The hard masks can made of a dielectricmaterial. An example of the hard mask is hard mask 306 described abovewith reference to FIG. 3 . The isolation spacers can partially fill therecesses between fin structures and formed on the sidewalls of finstructures. In an exemplary embodiment, the isolation spacers can bemade of a dielectric material. In an exemplary embodiment, the isolationspacers can be formed by blanket depositing an isolation material overthe exposed surfaces and using an anisotropic etching process to removehorizontal portions of the deposited isolation layer. An example ofisolation spacers are the isolation spacers 308 described above withreference to FIG. 3 . The seed layer structures are formed on thesidewalls of the isolation spacer. In an exemplary embodiment, the seedlayer structures can be formed of silicon material. The seed layerstructures can have a different etch selectivity as isolation spacers.An example of seed layer structures can be the seed layer structures 310described above with reference to FIG. 3 . The length of the seed layerstructures, measured along a length of the fin structures, can varybased on device needs, for example, the length of subsequently formedmetal drain channels. The top surfaces of the hard masks, the isolationspacers, and the seed layer structures can be substantially at the samelevel by performing suitable planarization processes on the top surfacesof these structures.

At operation 1604, gap fill is formed in openings and seed layerstructures are partially removed, in accordance with some embodiments.Gap fill structures can fill the openings formed in the structuredescribed in operation 1602 above. The gap fill structures can fill theopenings formed between any adjacent structures such as, for example,between adjacent fin structures, between opposing fin structures andseed layer structures, between opposing seed layer structures, and/orother openings between structures. In an exemplary embodiment, the gapfill structures can be made of a dielectric material similar to theisolation spacers. In an exemplary embodiment, the gap fill structurescan be formed by blanket depositing a gap fill material over the exposedsurfaces and in the openings and performing a planarization process toremove the excessive gap fill material.

At operation 1606, metal rail conductors and interlayer dielectric fillsare formed, in accordance with some embodiments. The metal railconductors can be formed on the seed layer structures. In an exemplaryembodiment, the metal rail conductors can be formed of any suitablematerials such as tungsten, cobalt, copper, aluminum, other suitablematerials, and/or combinations thereof. The metal rail conductors can beformed using partially-removed seed layers as a seed layer where thegrowth of metal rail conductors is started. For example, the metal railconductors can start forming from the top surface of partially-removedseed layer until a nominal thickness of the metal rail conductor isachieved. For example, tungsten material can be formed using siliconmaterial as a seed layer. In an exemplary embodiment, the growth ofmetal rail conductor material can be completed using suitable processessuch as CVD, electroplating, electroless plating, other suitableprocesses, and/or combinations thereof. The height of the metal railconductors can be in a range between about 0.8 to about 1.2 times thegate pitch of the finFET devices. In an exemplary embodiment, the widthof the metal rail conductors can be in a range between about 0.8 toabout 2.2 times the width of the fin structures. In an exemplaryembodiment, the pitch of the metal rail conductors (i.e., the distancebetween centers of adjacent metal rail conductors) can be in a rangebetween about 0.8 to about 1.2 times the fin pitch. An example of themetal rail conductors can be the metal rail conductors 502 describedabove with reference to FIGS. 5A and 5B. After the metal rail conductorsare formed, dielectric fills are formed over the metal rail conductorsand filling the openings within the gap fill structures. In an exemplaryembodiment, the dielectric fills can be formed by performing a blanketdeposition of dielectric fill material followed by a planarizationprocess. An example of dielectric fills is the dielectric fills 504.

At operation 1608, the ILD layer is etched back and poly gates areformed over the fin structures, in accordance with some embodiments. TheILD layer is uniformly etched back until a nominal depth is achieved. Inan exemplary embodiment, the etching process can be an isotropic etchingprocess. After the etching process, portions of the fin structures canprotrude from the top surfaces of the remaining ILD layer. The amount ofthe ILD layer removed determines the height of active fin structures andcan depend upon at least on the functionality requirements of the finFETdevices. The etching back process can be similar to the etching backprocess described above with reference to FIG. 6 . After the ILD layeris partially etched, poly gate structures are formed on the exposedsurfaces of the fin structures, including top surfaces and sidewallsurfaces not covered by the ILD layer. The poly gate structures caninclude a gate dielectric layer, a gate electrode structure, and/or oneor more additional layers, according to some embodiments. In anexemplary embodiment, the poly gate structure uses polysilicon as thegate electrode structure. In an exemplary embodiment, the poly gatepitch (i.e., the distance between centers of adjacent poly gatestructures) can be in a range between about 10 nm to about 300 nm. In anexemplary embodiment, the poly gate length can be in a range betweenabout 3 nm to about 80 nm.

At operation 1610, trenches are opened in the ILD layer to exposeportions of metal rail conductors, in accordance with some embodiments.In an exemplary embodiment, trenches can be formed between adjacent polygate structures and in the ILD layer such that subsequent source/drainterminals can electrically contact the metal rail conductors. Examplesof the trenches formed between adjacent poly gate structures can be thetrenches 702 described above with reference to FIGS. 7A and 7B. In anexemplary embodiment, trenches can be formed in the ILD layer such thatsubsequent metal gate structures can electrically contact the metal railconductors. For example, trenches can be formed after removing the polygate structure and prior to forming the metal gate structures.Source/drain terminals and STI regions are also formed during theprocess and similar to the process described with reference to FIGS.11A-13 above. Examples of trenches that exposed metal rail conductorbelow the metal gate structures can be the trenches 1402 described abovein FIG. 14 .

At operation 1612, conductive materials are deposited in the trench andon the exposed portions of metal rail conductors, in accordance withsome embodiments. In an exemplary embodiment, conductive materials suchas one or more source and drain terminals directly contact and areelectrically connected to the exposed metal rail conductors. Forexample, the epitaxial source/drain terminals 802 A and 802B of theepitaxial source/drain terminals 802 described in FIG. 8 respectivelyconnects to metal rail conductor regions 502A and 502B. Although onlythe epitaxial source/drain terminals 802A and 802B are shown to beconnected in FIG. 8 , other source/drain terminals can also be connecteddepending on the design and device needs. In an exemplary embodiment,conductive materials such as one or more metal gate structures directlycontact and are electrically connected to the exposed metal railconductors. For example, metal gate structure 1502A described above inFIG. 15A is formed around one of the fin structures 1304 and also intrench 1402, directly connecting to underlying metal rail conductors1308A and 1308B. Because the metal rail conductors are formed within theILD layer, they can electrically connect multiple metal gate structuresor multiple source/drain terminals without occupying additional devicespace.

FIG. 17 and FIG. 18 are cell layout diagrams of portions ofsemiconductor finFET arrays where dual metal rail conductor structurescan be used to provide electrical connection between multiple conductivestructures such as gate/source/drain terminals, according to exemplaryembodiments of the present disclosure.

FIG. 17 illustrates dual metal rail conductors that provide electricalconnection between multiple source/drain terminals, according toexemplary embodiments of the present disclosure. The cell layout diagram1700 illustrate semiconductor finFET arrays and include fins 1701A and1701B, poly gate structures 1702, contact openings 1704, source/draincontacts 1706, metal rail conductors 1708A-1708D, and vias 1710.Source/drain contacts are respectively situated in source/drain regionsin the cell layout diagrams of the portions of semiconductor finFETarrays. Other structures can be included in the finFET arrays and arenot illustrated here in the cell layout diagrams for simplicitypurposes. As illustrated in FIG. 17 , metal rail conductors 1708A and1708B are formed adjacent to and in parallel (e.g., extending in thesame direction) with fin 1701A. Similarly, metal rail conductors 1708Cand 1708D are formed adjacent to and in parallel with fin 1701B. Aplurality of poly gate structures 1702 are formed on and inperpendicular with fins 1701A and 1701B. Source/drain contacts 1706 areformed between adjacent poly gate structures 1702. Contact openings 1704can be used to expose portions of metal rail conductors 1708A-1708D fromthe dielectric layer (not illustrated in FIG. 17 ) such thatsubsequently formed source/drain contacts 1706 can be electricallyconnected. The dielectric layer is situated in a dielectric region inthe cell layout diagram. In some embodiments, fins 1701A and 1701B canbe similar to fins 304 described above with reference to FIG. 3A throughFIG. 11B. Similarly, poly gate structures 1702 can be similar to polygate structure 1002. Contact openings 1704 can be similar to trenches702 illustrated in FIG. 7B. Metal rail conductors 1708A-1708D can besimilar to metal rail conductors 502 as illustrated in FIG. 3A throughFIG. 11B. Vias 1710 can be used to provide electrical connection betweendifferent layers of the finFET array, for example, vias 1710 can be usedto connect source/drain contacts or poly gate structures to an MO layerof the semiconductor structure. MO metal lines can be metal lines in ametal 0 layer of a back-end-of-line (BEOL) interconnect structure. Forexample, MO metal lines can be local interconnects that represent afirst interconnect level and electrically connect to underlying finFETarrays through one or more vias.

FIG. 18 illustrates dual metal rail conductors that provide electricalconnection between multiple poly gate terminals, according to exemplaryembodiments of the present disclosure. The cell layout diagram 1800illustrate semiconductor finFET arrays and include fins 1801A and 1801B,poly gate structures 1802, contact openings 1804, source/drain contacts1806, metal rail conductors 1808A-1808D, and vias 1810. Other structurescan be included in the finFET arrays and are not illustrated here in thecell layout diagrams for simplicity purposes. Metal rail conductors1808A and 1808B are formed adjacent to and in parallel (e.g., extendingin the same direction) with fin 1801A, and metal rail conductors 1808Cand 1808D are formed adjacent to and in parallel with fin 1801B. Aplurality of poly gate structures 1802 are formed on and inperpendicular with fins 1801A and 1801B. Source/drain contacts 1806 areformed between adjacent poly gate structures 1802. Contact openings 1804can be used to expose portions of metal rail conductors 1808A-1808D fromthe dielectric layer (not illustrated in FIG. 18 ) such thatsubsequently formed one or more specific poly gate structures can beelectrically connected through the metal rail conductors.

FIG. 19 and FIG. 20 are cell layout diagrams of portions ofsemiconductor finFET arrays where a single metal rail conductorstructure can be used to provide electrical connection between multiplegate/source/drain terminals, according to exemplary embodiments of thepresent disclosure.

The cell layout diagram 1900 illustrate semiconductor finFET arrays andinclude fins 1901A and 1901B, poly gate structures 1902, contactopenings 1904, source/drain contacts 1906, metal rail conductors 1908Aand 1908B, and vias 1910. Other structures can be included in the finFETarrays and are not illustrated here in the cell layout diagrams forsimplicity purposes. The structures illustrated in FIG. 19 can besimilar to the corresponding structures illustrated above in FIG. 17 ,however, each fin 1901A and 1901B in FIG. 19 respectively includes asingle metal rail conductor 1908A and 1908B. Contact openings 1904 canbe used to expose portions of metal rail conductors 1908A and 1908B fromthe dielectric layer (not illustrated in FIG. 19 ) such thatsubsequently formed source/drain contacts 1906 can be electricallyconnected.

FIG. 20 illustrates single metal rail conductor that provides electricalconnection between multiple poly gate terminals, according to exemplaryembodiments of the present disclosure. The cell layout diagram 2000illustrate semiconductor finFET arrays and include fins 2001A and 2001B,poly gate structures 2002, contact openings 2004, source/drain contacts2006, metal rail conductors 2008A-2008D, and vias 2010. Other structurescan be included in the finFET arrays and are not illustrated here in thecell layout diagrams for simplicity purposes. Metal rail conductors2008A and 2008B are formed adjacent to and in parallel with fin 2001A,and metal rail conductors 2008C and 2008D are formed adjacent to and inparallel with fin 2001B. A plurality of poly gate structures 2002 areformed on and in perpendicular with fins 2001A and 2001B. Source/draincontacts 2006 are formed between adjacent poly gate structures 2002.Contact openings 2004 can be used to expose portions of metal railconductors 2008A-2008D from the dielectric layer (not illustrated inFIG. 20 ) such that subsequently formed one or more specific poly gatestructures can be electrically connected through the metal railconductors.

CONCLUSION

The foregoing Detailed Description discloses a non-planar semiconductordevice. The non-planar semiconductor device includes a dielectric regionformed on a substrate, multiple terminal regions situated onto thedielectric region, and a rail conductor situated within the dielectricregion. The rail conductor is electrically connected to a first terminalregion from among the multiple terminal regions.

The foregoing Detailed Description additionally discloses an integratedcircuit. The integrated circuit includes a dielectric region, a firstfin field-effect transistor (finFET), having a first source region, afirst gate region, and a first drain region, a second finFET having asecond source region, a second gate region, and a second drain region,situated onto the dielectric region, and a rail conductor situatedwithin the dielectric region. The rail conductor is electricallyconnected to a first terminal region selected from among the firstsource region, the first gate region, the first drain region, the secondsource region, the second gate region, or the second drain region.

The foregoing Detailed Description further discloses a fin field-effecttransistor (finFET). The finFET includes a semiconductor substrate, adielectric region situated above the semiconductor substrate, a sourceregion situated onto the dielectric region, a gate region situated ontothe dielectric region, a drain region situated onto the dielectricregion, a fin structure situated onto the semiconductor substrate andtraversing through the dielectric region, and a rail conductor situatedwithin the dielectric region. The fin structure is between the sourceregion and the drain region and to traverse through the gate region. Therail conductor is parallel to the fin structure and to be extend ahorizontal length of the semiconductor substrate

The foregoing Detailed Description referred to accompanying figures toillustrate exemplary embodiments consistent with the disclosure.References in the foregoing Detailed Description to “an exemplaryembodiment” indicates that the exemplary embodiment described caninclude a particular feature, structure, or characteristic, but everyexemplary embodiment may not necessarily include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same exemplary embodiment. Further, any feature,structure, or characteristic described in connection with an exemplaryembodiment can be included, independently or in any combination, withfeatures, structures, or characteristics of other exemplary embodimentswhether or not explicitly described.

The foregoing Detailed Description is not meant to limiting. Rather, thescope of the disclosure is defined only in accordance with the followingclaims and their equivalents. It is to be appreciated that the foregoingDetailed Description, and not the following Abstract section, isintended to be used to interpret the claims. The Abstract section canset forth one or more, but not all exemplary embodiments, of thedisclosure, and thus, is not intended to limit the disclosure and thefollowing claims and their equivalents in any way.

The exemplary embodiments described within foregoing DetailedDescription have been provided for illustrative purposes, and are notintended to be limiting. Other exemplary embodiments are possible, andmodifications can be made to the exemplary embodiments while remainingwithin the spirit and scope of the disclosure. The foregoing DetailedDescription has been described with the aid of functional buildingblocks illustrating the implementation of specified functions andrelationships thereof. The boundaries of these functional buildingblocks have been arbitrarily defined herein for the convenience of thedescription. Alternate boundaries can be defined so long as thespecified functions and relationships thereof are appropriatelyperformed.

Embodiments of the disclosure can be implemented in hardware, firmware,software, or any combination thereof. Embodiments of the disclosure canalso be implemented as instructions stored on a machine-readable medium,which can be read and executed by one or more processors. Amachine-readable medium can include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., acomputing circuitry). For example, a machine-readable medium can includenon-transitory machine-readable mediums such as read only memory (ROM);random access memory (RAM); magnetic disk storage media; optical storagemedia; flash memory devices; and others. As another example, themachine-readable medium can include transitory machine-readable mediumsuch as electrical, optical, acoustical, or other forms of propagatedsignals (e.g., carrier waves, infrared signals, digital signals, etc.).Further, firmware, software, routines, instructions can be describedherein as performing certain actions. However, it should be appreciatedthat such descriptions are merely for convenience and that such actionsin fact result from computing devices, processors, controllers, or otherdevices executing the firmware, software, routines, instructions, etc.

The foregoing Detailed Description fully revealed the general nature ofthe disclosure that others can, by applying knowledge of those skilledin relevant art(s), readily modify and/or adapt for various applicationssuch exemplary embodiments, without undue experimentation, withoutdeparting from the spirit and scope of the disclosure. Therefore, suchadaptations and modifications are intended to be within the meaning andplurality of equivalents of the exemplary embodiments based upon theteaching and guidance presented herein. It is to be understood that thephraseology or terminology herein is for the purpose of description andnot of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by those skilled in relevantart(s) in light of the teachings herein.

What is claimed is:
 1. A method, comprising: forming a plurality of finsprotruding from a first dielectric layer; depositing a spacer on asidewall of the fin and in contact with the first dielectric layer;depositing a second dielectric layer on the first dielectric layer;depositing a conductive material between the second dielectric layer andthe spacer to form a conductive rail, wherein a top surface of theconductive rail is below a top surface of the plurality of fins; andforming a semiconductor source/drain terminal surrounding the pluralityof fins and in contact with a top surface of the conductive rail.
 2. Themethod of claim 1, further comprising forming a seed layer on the firstdielectric layer.
 3. The method of claim 2, wherein depositing theconductive material comprises epitaxially growing the conductivematerial from a top surface of the seed layer.
 4. The method of claim 2,wherein forming the seed layer comprises: depositing a seed structure onthe first dielectric layer and in contact with the spacer; and etchingback the seed structure.
 5. The method of claim 4, wherein depositingthe seed structure comprises depositing silicon.
 6. The method of claim1, wherein depositing the conductive material comprises depositingtungsten.
 7. The method of claim 1, further comprising depositing athird dielectric layer on the conductive rail.
 8. The method of claim 7,further comprising depositing a shallow trench isolation (STI) layerover the conductive rail and the second and third dielectric layers. 9.The method of claim 1, further comprising depositing a hard mask layeron the top surface of the plurality of fins.
 10. The method of claim 1,wherein the source/drain terminal is formed above the conductive rail.11. A method, comprising: forming a fin protruding from a firstdielectric layer; depositing a spacer in contact with a sidewall of thefin and the first dielectric layer; depositing a second dielectric layeron the first dielectric layer; depositing a conductive material incontact with the second dielectric layer and the spacer to form aconductive rail, wherein a top surface of the conductive rail is below atop surface of the fin; depositing a third dielectric layer on theconductive material and in contact with the second dielectric layer andthe spacer; etching the spacer and the second and third dielectriclayers to expose a portion of the top surface of the conductive rail;and forming a source/drain terminal in contact with the exposed portionof the top surface of the conductive rail.
 12. The method of claim 11,further comprising forming a seed layer on the first dielectric layer.13. The method of claim 12, wherein depositing the conductive materialcomprises epitaxially growing the conductive material from a top surfaceof the seed layer.
 14. The method of claim 12, wherein forming the seedlayer comprises: depositing a seed structure on the first dielectriclayer and in contact with the spacer; and etching back the seedstructure.
 15. The method of claim 14, wherein depositing the seedstructure comprises depositing silicon.
 16. The method of claim 11,wherein depositing the conductive material comprises depositingtungsten.
 17. A method, comprising: forming first and second fins;forming a conductive material between the first and second fins to forma conductive rail, wherein a top surface of the conductive rail is belowtop surfaces of the first and second fins; depositing a dielectric layeron the top surface of the conductive rail; etching a portion of thedielectric layer to expose a portion of the top surface of theconductive rail; and epitaxially growing a source/drain terminalsurrounding the first and second fins and in contact with the exposedportion of the top surface of the conductive rail.
 18. The method ofclaim 17, further comprising: forming a seed material between the firstand second fins; and etching back the seed material to form a seedlayer.
 19. The method of claim 18, wherein forming the seed materialcomprises depositing silicon.
 20. The method of claim 18, whereingrowing the conductive material comprises growing tungsten in contactwith the seed layer.